US Patent 7839509 Method of measuring deep trenches with model-based optical spectroscopy
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Patent abstract
The invention represents an improved method of measuring trenches on semiconductor wafers with optical spectroscopy. According to the described method, it is possible to characterize not only depth but also shape of the trench. The advancement is achieved by improved Effective Medium Approximation-based modeling of the optical response of trench structures.
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US Patent 07839509 Method of measuring deep trenches with model-based optical spectroscopy US Patent 7839509 Method of measuring deep trenches with model-based optical spectroscopy
Infobox
Patent Number
0783950900
Patent Number
783950900
Edits on 25 Mar, 2023
Golden AI
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Patent Jurisdiction
Patent Number
078395090
Date of Patent
November 23, 2010
0Patent Application Number
119947630
Date Filed
June 30, 2006
0Official Website
Patent Primary Examiner
Edits on 26 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
078395090
Date of Patent
November 23, 2010
0Patent Application Number
119947630
Date Filed
June 30, 2006
0Official Website
Patent Primary Examiner
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US Patent 07839509 Method of measuring deep trenches with model-based optical spectroscopy
Infobox
Is a
Patent jurisdiction
Patent number
07839509
Date of patent
November 23, 2010
Patent application number
11994763
Date Filed
June 30, 2006
Patent primary examiner
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