Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 30, 2010
Patent Application Number
11933785
Date Filed
November 1, 2007
Patent Primary Examiner
Patent abstract
A method for fabricating a semiconductor device, includes forming a porous dielectric film above a substrate using a porous insulating material, forming an opening in the porous dielectric film, repairing film quality of the porous dielectric film on a surface of the opening by feeding a predetermined gas replacing a Si—OH group to the opening, and performing pore sealing of the surface of the opening using the same predetermined gas as that used for film quality repairs after repairing the film quality.
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