Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 30, 2010
Patent Application Number
11967133
Date Filed
December 29, 2007
Patent Primary Examiner
Patent abstract
A semiconductor device includes a substrate having a recess in an area where a gate is to be formed, spacers formed over sidewalls of the recess, and a first gate electrode filling in the recess. The spacers include material having the first work function or insulation material. The first gate electrode includes material having a second work function, wherein the second work function is higher than that of the spacers.
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