Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Thomas W. Mountsier0
Michael Carris0
Yongsik Yu0
William Crew0
Atul Gupta0
Karen Billington0
Date of Patent
November 30, 2010
0Patent Application Number
118053560
Date Filed
May 22, 2007
0Patent Primary Examiner
Patent abstract
The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
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