Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shiro Uchiyama0
Date of Patent
November 30, 2010
0Patent Application Number
120007140
Date Filed
December 17, 2007
0Patent Primary Examiner
Patent abstract
A through-electrode that penetrates a semiconductor substrate and that is insulatively separated from the semiconductor substrate includes an inner through-electrode, a quadrangular ring-shaped semiconductor, and an outer peripheral through-electrode. The quadrangular ring-shaped semiconductor is formed around the inner through-electrode, and the outer peripheral through-electrode is formed around the quadrangular ring-shaped semiconductor.
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