Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wen-Hsi Lee0
Jiun-Jie Wang0
Tarng-Shiang Hu0
Wei-Ling Lin0
Cheng-Chung Lee0
Jiing-Fa Wen0
Date of Patent
November 30, 2010
0Patent Application Number
118494600
Date Filed
September 4, 2007
0Patent Primary Examiner
Patent abstract
Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.
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