Patent attributes
A semiconductor device includes a substrate portion and a number of diffusion regions defined within the substrate portion. The diffusion regions are separated from each other by a non-active region of the substrate portion. The semiconductor device includes a number of linear gate electrode segments defined to extend over the substrate portion in a single common direction. In one embodiment, the diffusion regions are defined in a non-symmetrical manner relative to a centerline of the substrate portion. In another embodiment, the substrate portion corresponds to a region of the semiconductor device in which first and second cells are defined, and respectively include diffusion shapes of different size. In another embodiment, one or more of the diffusion regions is defined to have a periphery formed by more than four orthogonally related sides.
