US Patent 7843009 Electrostatic discharge protection device for an integrated circuit

An integrated circuit is made of a semiconductor material and comprises an input and/or terminal connected to an output transistor forming a parasitic element capable of triggering itself under the effect of an electrostatic discharge applied to the terminal. The integrated circuit comprises a protection device formed so as to be biased at the same time as the parasitic element under the effect of an electrostatic discharge, and more than the parasitic element to evacuate a discharge current as a priority.