Patent 7843011 was granted and assigned to Freescale Semiconductor on November, 2010 by the United States Patent and Trademark Office.
An electronic device can include a field isolation region and a first insulating layer having a first strain and having a portion, which from a top view, lies entirely within the field isolation region. The electronic device can also include a second insulating layer having a second strain different from the first strain and including an opening. From a top view, the portion of the first insulating layer can lie within the opening in the second insulating layer. In one embodiment, the field isolation region can include a dummy structure and the portion of the first insulating layer can overlie the dummy structure. A process of forming the electronic device can include forming an island portion of an insulating layer wherein from a top view, the island portion lies entirely within the field isolation region.