US Patent 7846803 Multiple millisecond anneals for semiconductor device fabrication
Patent 7846803 was granted and assigned to Freescale Semiconductor on December, 2010 by the United States Patent and Trademark Office.
All edits
A method of forming a doped region includes, in one embodiment, implanting a dopant into a region in a semiconductor substrate, recrystallizing the region by performing a first millisecond anneal, wherein the first millisecond anneal has a first temperature and a first dwell time, and activating the region using as second millisecond anneal after recrystallizing the region, wherein the second millisecond anneal has a second temperature and a second dwell time. In one embodiment, the first millisecond anneal and the second millisecond anneal use a laser. In one embodiment, the first temperature is the same as the second temperature and the first dwell time is the same as the second dwell time. In another embodiment, the first temperature is different from the second temperature and the first dwell time is different from the second dwell time.
US Patent 07846803 Multiple millisecond anneals for semiconductor device fabrication US Patent 7846803 Multiple millisecond anneals for semiconductor device fabrication
US Patent 07846803 Multiple millisecond anneals for semiconductor device fabrication
Find more entities like US Patent 7846803 Multiple millisecond anneals for semiconductor device fabrication
