US Patent 7851316 Fabrication method of semiconductor device

A fabrication method of a semiconductor device includes: forming a gate insulating film and a gate electrode on an N type well; forming first source/drain regions by implanting a first element in regions of the N type well on both sides of the gate electrode, the first element being larger than silicon and exhibiting P type conductivity; forming second source/drain regions by implanting a second element in the regions of the N type well on the both sides of the gate electrode, the second element being smaller than silicon and exhibiting P type conductivity; and forming a metal silicide layer on the source/drain regions.