Patent attributes
The formation of electronic assemblies including a die having through vias is described. In one embodiment, a method includes providing Si die including a first surface and a second surface opposite the first surface, and forming a via extending through the Si die from the first surface to the second surface. The via is formed to have a larger width at the first surface than at the second surface, the larger width at the first surface being no less than 100 microns. The method also includes placing a plurality of particles in the via, wherein at least some of the particles comprise a polymer and at least some of the particles comprise a metal. The method also includes heating the die and the particles in the via to cross-link at least part of the polymer in the via, and cooling the die to solidify the polymer and form a electrically conductive composite including the cross-linked polymer and the metal in the via. Other embodiments are described and claimed.
