Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
December 14, 2010
Patent Application Number
11707611
Date Filed
February 15, 2007
Patent Primary Examiner
Patent abstract
The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
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