Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Masafumi Sano0
Nobuyuki Kaji0
Toshiaki Aiba0
Date of Patent
December 14, 2010
0Patent Application Number
120899070
Date Filed
November 1, 2006
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film.
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