Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kei Takahashi0
Date of Patent
December 14, 2010
0Patent Application Number
120549490
Date Filed
March 25, 2008
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A single-crystal semiconductor layer which is separated from a single-crystal semiconductor substrate, and bonded to and provided over a supporting substrate is used, whereby a transistor having uniform characteristics can be formed. A reference circuit having a bipolar transistor is provided, whereby temperature dependence of a driving transistor which is driven by supplying current to the light-emitting element of a pixel is compensated.
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