US Patent 7851910 Diffusion soldered semiconductor device
Patent 7851910 was granted and assigned to Infineon Technologies on December, 2010 by the United States Patent and Trademark Office.
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Patent abstract
The invention relates to a process for the multi-stage production of diffusion-soldered joints for power components with semiconductor chips, the melting points of diffusion-soldering alloys and diffusion-soldered joints being staggered in such a manner that a first melting point of the first diffusion-soldering alloy is lower than a second melting point of the second diffusion-soldering alloy, and the second melting point being lower than a third melting point of a first diffusion-soldered joint of the first diffusion-soldering alloy.
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Patent Inventor Names
Edmund Riedl0
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Official Website
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US Patent 07851910 Diffusion soldered semiconductor device US Patent 7851910 Diffusion soldered semiconductor device
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Patent Number
078519100
Patent Number
78519100
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Current Assignee
Patent Jurisdiction
Patent Number
078519100
Date of Patent
December 14, 2010
0Patent Application Number
105517450
Date Filed
March 31, 2004
0Official Website
Patent Primary Examiner
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US Patent 07851910 Diffusion soldered semiconductor device
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07851910
Date of patent
December 14, 2010
Patent application number
10551745
Date Filed
March 31, 2004
Patent primary examiner
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