US Patent 7852890 Semiconductor laser and manufacturing method thereof

In a semiconductor laser, in order to realize a desired oscillation wavelength efficiently by adjusting the oscillation wavelength of the laser with sufficient accuracy even when the oscillation wavelength of a manufactured laser deviates from a design value, for example, due to the manufacturing errors and the like in the manufacturing of the laser, there is provided a semiconductor laser comprising a semiconductor substrate, a semiconductor stacking body including a waveguide formed on the semiconductor substrate, and a diffraction grating, wherein the diffraction grating is formed along the waveguide so as to appear in the surface of the semiconductor stacking body.