Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 21, 2010
Patent Application Number
12713753
Date Filed
February 26, 2010
Patent Primary Examiner
Patent abstract
A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).
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