Patent attributes
A method for manufacturing a semiconductor device and a display device each including a thin film transistor which has excellent electric characteristics and high reliability, with high mass productivity. In a display device which includes a channel-etch inversely-staggered thin film transistor in which a microcrystalline semiconductor layer is used for a channel formation region, the microcrystalline semiconductor layer is formed of a stacked layer of a microcrystalline semiconductor film which is formed by a deposition method and can be a nucleus of crystal growth and an amorphous semiconductor film; a conductive film and a semiconductor film which forms a source region and a drain region and to which an impurity imparting one conductivity is added are formed over the amorphous semiconductor film; and the conductive film is irradiated with laser light. The amorphous semiconductor film over the microcrystalline semiconductor film is crystallized by the laser light, and the microcrystalline semiconductor layer including the microcrystalline semiconductor film formed by a deposition method can be formed.
