US Patent 7858995 Semiconductor light emitting device
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Patent abstract
A semiconductor light emitting device includes a substrate, and a light emitting portion that is disposed on the substrate, and includes an active layer formed of a group III nitride semiconductor using a nonpolar plane or a semipolar plane as a growth principal surface, in which side end surfaces of the active layer are specular surfaces.
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Patent Inventor Names
Hiroki Tsujimura0
Satoshi Nakagawa0
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Official Website
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US Patent 07858995 Semiconductor light emitting device US Patent 7858995 Semiconductor light emitting device
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Patent Number
078589950
Patent Number
78589950
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Patent Jurisdiction
Patent Number
078589950
Date of Patent
December 28, 2010
0Patent Application Number
122221260
Date Filed
August 1, 2008
0Official Website
Patent Primary Examiner
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US Patent 07858995 Semiconductor light emitting device
Infobox
Is a
Patent jurisdiction
Patent number
07858995
Date of patent
December 28, 2010
Patent application number
12222126
Date Filed
August 1, 2008
Patent primary examiner
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