Patent attributes
A HEMT-type field-effect semiconductor device has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source and a drain overlie the electron supply layer. A carrier storage layer overlies the electron supply layer via an insulator, and a gate overlies the carrier storage layer via another insulator. Upon application of an initialiser voltage to the gate, the carrier storage layer has stored therein a sufficient amount of carriers to hold the device off even without voltage application to the gate. An initialiser circuit is also disclosed whereby the device is initialized automatically for normally-off operation.
