Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hirokazu Hayashi0
Date of Patent
December 28, 2010
0Patent Application Number
123362570
Date Filed
December 16, 2008
0Patent Primary Examiner
Patent abstract
According to a feature of the present invention, a semiconductor device includes a SOI substrate, including a semiconductor substrate; an insulating layer formed on the semiconductor substrate and a silicon layer formed on the insulating layer. A drain region and a source region are formed in the silicon layer so that the source region is in contact with the insulating layer but the drain region is not in contact with the insulating layer.
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