Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 4, 2011
Patent Application Number
12200467
Date Filed
August 28, 2008
Patent Primary Examiner
Patent abstract
It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen into the amorphous silicon layer; and forming a silicon oxynitride layer by nitriding the amorphous silicon layer having oxygen introduced thereinto.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
