Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Seiji Nakahata0
Fumitaka Sato0
Date of Patent
January 4, 2011
Patent Application Number
12370606
Date Filed
February 13, 2009
Patent Primary Examiner
Patent abstract
Made available is a Group III nitride crystal manufacturing method whereby incidence of cracking in the III-nitride crystal when the III-nitride substrate is removed is kept to a minimum. III nitride crystal manufacturing method provided with: a step of growing, onto one principal face (10m) of a III-nitride substrate (10), III-nitride crystal (20) at least either whose constituent-atom type and ratios, or whose dopant type and concentration, differ from those of the III-nitride substrate (10); and a step of removing the III-nitride substrate (10) by vapor-phase etching.
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