Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Eun Hyun Park0
Tae-Kyung Yoo0
Joong Seo Park0
Date of Patent
January 4, 2011
Patent Application Number
10542485
Date Filed
August 21, 2004
Patent Primary Examiner
Patent abstract
The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGaInN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.
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