US Patent 7863610 Integrated circuit including silicide region to inhibit parasitic currents
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Patent abstract
An integrated circuit is disclosed. One embodiment includes a first diode, a second diode, and a semiconductor line coupled to the first diode and the second diode. The line includes a first silicide region between the first diode and the second diode.
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Patent Inventor Names
Bipin Rajendran0
Shoaib Hasan.Zaidi0
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US Patent 07863610 Integrated circuit including silicide region to inhibit parasitic currents US Patent 7863610 Integrated circuit including silicide region to inhibit parasitic currents
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Patent Number
078636100
Patent Number
78636100
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Official Website
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Patent Jurisdiction
Patent Number
078636100
Date of Patent
January 4, 2011
0Patent Application Number
118430440
Date Filed
August 22, 2007
0Official Website
Patent Primary Examiner
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US Patent 07863610 Integrated circuit including silicide region to inhibit parasitic currents
Infobox
Is a
Patent jurisdiction
Patent number
07863610
Date of patent
January 4, 2011
Patent application number
11843044
Date Filed
August 22, 2007
Patent primary examiner
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