Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Katsumi Abe0
Hideo Hosono0
Kenji Nomura0
Toshio Kamiya0
Date of Patent
January 4, 2011
0Patent Application Number
112696460
Date Filed
November 9, 2005
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
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