US Patent 7863648 Field effect transistor
Patent 7863648 was granted and assigned to NEC Corporation on January, 2011 by the United States Patent and Trademark Office.
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A field effect transistor (100) exhibiting good performance at high voltage operation and high frequency includes a first field plate electrode (116) and a second field plate electrode (118). The second field plate electrode includes a shielding part (119) located in the region between the first field plate electrode and a drain electrode (114), and serves to shield the first field plate electrode from the drain electrode. When in the cross sectional view in the gate length direction, the length in the gate length direction of an overlap region where the second field plate electrode (118) overlap the upper part of a structure including the first field plate electrode and a gate electrode (113) is designated as Lol, and the gate length is Lg, the relation expressed as 0 ≦Lol/Lg≦1 holds.
US Patent 07863648 Field effect transistor US Patent 7863648 Field effect transistor
US Patent 07863648 Field effect transistor
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