Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Fwu-Iuan Hshieh0
Date of Patent
January 4, 2011
0Patent Application Number
121560700
Date Filed
May 28, 2008
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A trenched semiconductor power device that includes a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. Each of the body regions extended between two adjacent trenched gates further having a gap exposing a top surface above an epitaxial layer above said semiconductor substrate. The trenched semiconductor power device further includes a Schottky junction barrier layer covering the top surface above the epitaxial layer between the trenched gate thus forming embedded Schottky diodes between adjacent trenched gates.
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