Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ken Ikeda0
Takayuki Suzuki0
Takeshi Meguro0
Date of Patent
January 11, 2011
0Patent Application Number
123975440
Date Filed
March 4, 2009
0Patent Primary Examiner
Patent abstract
A method for manufacturing a nitride semiconductor substrate including the steps of: forming a nitride semiconductor layer on a sapphire substrate, and manufacturing a freestanding nitride semiconductor substrate by using the nitride semiconductor layer separated from the sapphire substrate, wherein variability of inclinations of the C-axes, being a difference between a maximum value and a minimum value of inclination of the C-axes in a radially-outward direction at each point on a front surface of the sapphire substrate is 0.3° or more and 1° or less.
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