Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takeyoshi Masuda0
Kazuhiro Fujikawa0
Date of Patent
January 11, 2011
0Patent Application Number
124445510
Date Filed
August 13, 2007
0Patent Primary Examiner
Patent abstract
A method of manufacturing an SiC semiconductor device includes the steps of ion implanting a dopant at least in a part of a surface of an SiC single crystal, forming an Si film on the surface of the ion-implanted SiC single crystal, and heating the SiC single crystal on which the Si film is formed to a temperature not less than a melting temperature of the Si film.
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