Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 11, 2011
Patent Application Number
12385238
Date Filed
April 2, 2009
Patent Primary Examiner
Patent abstract
A semiconductor laser device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane. The semiconductor laser device includes a cavity having an active layer containing In and distributed Bragg reflectors coating both cavity end faces of the cavity respectively. In each of the distributed Bragg reflectors, a central wavelength λc of a reflectance spectrum satisfies the relation λSP−10 nm≦λc≦λSP+10 nm with respect to an emission peak wavelength λSP of spontaneous emission in the active layer.
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