Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 18, 2011
Patent Application Number
12508177
Date Filed
July 23, 2009
Patent Primary Examiner
Patent abstract
A semiconductor structure including at least one n-type field effect transistor (nFET) and at least one p-type field effect transistor (pFET) that both include a metal gate having nFET behavior and pFET behavior, respectively, without including an upper polysilicon gate electrode is provided. The present invention also provides a method of fabricating such a semiconductor structure.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
