Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tao-Cheng Lu0
Ichen Yang0
Kuan-Po Chen0
Mu-Yi Liu0
Chia-Lun Hsu0
Date of Patent
January 25, 2011
0Patent Application Number
123258240
Date Filed
December 1, 2008
0Patent Primary Examiner
Patent abstract
An LDMOS device and method of fabrication are provided. The LDMOS device has a substrate with a source region and a drain region formed in the substrate. An insulating layer is provided on a portion of the substrate between the source and the drain region, such that a planar interface is provided between the insulating layer and a surface of the substrate. An insulating member is then formed on a portion of the insulating layer, and a gate layer is formed over part of the insulating member and the insulating layer. By employing such a structure, it has been found that a flat current path exists which enables the on-resistance to be decreased while maintaining a high breakdown voltage.
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