A sense amplifier driving control circuit has a stable discharge characteristic by differently controlling the discharge of a node having a driving voltage according to the change of an organization of a semiconductor memory device. The sense amplifier driving control circuit includes a pull-down driving block configured to provide a pull-down voltage for a pull-down operation of the sense amplifier, a pull-up driving block configured to sequentially provide a first voltage for the overdrive and a second voltage for the normal drive as a pull-up voltage for a pull-up operation of the sense amplifier, wherein a voltage level of the second voltage is lower than that of the first voltage, and a discharging block configured to discharge the node having the second voltage by controlling a amount of the discharging according to an organization of the semiconductor memory device.