Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hidetsugu Uchida0
Date of Patent
February 1, 2011
0Patent Application Number
111556100
Date Filed
June 20, 2005
0Patent Primary Examiner
Patent abstract
An insulating film layer is formed between a channel region of an MOS element formed in a monocrystal silicon layer of an SOS substrate in which the monocrystal silicon layer is laminated on a sapphire substrate, and the sapphire substrate, thereby to bring a stress state of the monocrystal silicon layer on the insulating film layer into a tensile stress state.
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