US Patent 7879700 Crystallization apparatus and method of amorphous silicon
Patent 7879700 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on February, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.
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US Patent 07879700 Crystallization apparatus and method of amorphous silicon US Patent 7879700 Crystallization apparatus and method of amorphous silicon
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Patent Number
0787970000
Patent Number
787970000
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Current Assignee
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Patent Jurisdiction
Patent Number
078797000
Date of Patent
February 1, 2011
0Patent Application Number
105470700
Date Filed
February 24, 2004
0Official Website
Patent Primary Examiner
Edits on 24 Sep, 2022
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
078797000
Date of Patent
February 1, 2011
0Patent Application Number
105470700
Date Filed
February 24, 2004
0Official Website
Patent Primary Examiner
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US Patent 07879700 Crystallization apparatus and method of amorphous silicon
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07879700
Date of patent
February 1, 2011
Patent application number
10547070
Date Filed
February 24, 2004
Patent primary examiner
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