Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Thomas Nirschl0
Date of Patent
February 1, 2011
Patent Application Number
11438450
Date Filed
May 22, 2006
Patent Primary Examiner
Patent abstract
A memory includes a first tunneling field effect transistor including a first drain and a first source, the first drain coupled to a first resistive memory element. The memory includes a second tunneling field effect transistor including a second drain and sharing the first source, the second drain coupled to a second resistive memory element. The memory includes a first region coupled to the first source for providing a source node.
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