Patent attributes
A fast recovery rectifier structure with the combination of Schottky structure to relieve the minority carriers during the forward bias condition for the further reduction of the reverse recovery time during switching in addition to the lifetime killer such as Pt, Au, and/or irradiation. This fast recovery rectifier uses unpolished substrates and thick impurity diffusion for low cost production. A reduced p-n junction structure with a heavily doped film is provided to terminate and shorten the p-n junction space charge region. This reduced p-n junction with less total charge in the p-n junction to further improve the reverse recovery time. This reduced p-n junction can be used alone, with the traditional lifetime killer method, with the Schottky structure and/or with the epitaxial substrate.
