Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoshito Nakazawa0
Hitoshi Matsuura0
Date of Patent
February 1, 2011
0Patent Application Number
119273750
Date Filed
October 29, 2007
0Patent Primary Examiner
Patent abstract
A trench is formed so as to reach a p−-type epitaxial layer from an upper surface of a source region. A gate electrode is formed so as to bury the trench. Each of body contact trenches is formed away from the gate electrode. A body contact region is formed at the bottom of the body contact trench. An n-type semiconductor region that is a feature of the present invention is formed in a layer below each body contact region. The impurity concentration of the n-type semiconductor region is higher than a channel forming area and lower than the body contact region.
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