Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
February 8, 2011
Patent Application Number
10774454
Date Filed
February 10, 2004
Patent Primary Examiner
Patent abstract
An object of the present invention is to provide a method of forming a thin film of excellent quality by generating discharge plasma using gaseous raw material including a carbon source under an atmosphere of a relatively high pressure of 100 Torr or higher. A substrate 6 is mounted on at least one of opposing electrodes 4 and 5. A pulse voltage is applied on the opposing electrodes 4 and 5 under a pressure of 100 to 1600 Torr in an atmosphere containing gaseous raw material “A” including a carbon source to generate discharge plasma. A thin film 7 is thus formed on the substrate 6. The pulse voltage has a pulse duration of 10 to 1000 nsec.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
