Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chi-Hsin Lo0
Ming-Chyi Liu0
Yuan-Chih Hsieh0
Yuan-Hung Liu0
Chia-Shiung Tsai0
Gwo-Yuh Shiau0
Date of Patent
February 8, 2011
Patent Application Number
12354171
Date Filed
January 15, 2009
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for forming a semiconductor device with a bonding pad is disclosed. A first substrate having a device area and a bonding area is provided, wherein the first substrate has an upper surface and a bottom surface. Semiconductor elements are formed on the upper surface of the first substrate in the device area. A first inter-metal dielectric layer is formed on the upper surface of the substrate in the bonding area. A lowermost metal pattern is formed in the first inter-metal dielectric layer, wherein the lowermost metal pattern serves as the bonding pad. An opening through the first substrate is formed to expose the lowermost metal pattern.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
