Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yanzhong Xu0
Christopher J. Pass0
Dale Ibbotson0
Jeffrey T. Watt0
Che Ta Hsu0
Date of Patent
February 8, 2011
Patent Application Number
12151646
Date Filed
May 8, 2008
Patent Primary Examiner
Patent abstract
A method for forming a submicron device includes depositing a hard mask over a first region that includes a polysilicon well of a first dopant type and a gate of a second dopant type and a second region that includes a polysilicon well of a second dopant type and a gate of a first dopant type. The hard mask over the first region is removed. Angled implantation of the first dopant type is performed to form pockets under the gate of the second dopant type.
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