Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 8, 2011
Patent Application Number
11882854
Date Filed
August 6, 2007
Patent Primary Examiner
Patent abstract
In a high voltage MOS transistor, in a portion immediately below the gate electrode, peaks of concentration distribution in depth direction of a first conductivity type impurity and a second conductivity type impurity in the drain offset region are in the same depth, the second conductivity type impurity being higher concentrated than the first conductivity type impurity.
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