Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 8, 2011
Patent Application Number
12210645
Date Filed
September 15, 2008
Patent Primary Examiner
Patent abstract
A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.
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