Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
William Alan Doolittle0
Gon Namkoong0
Date of Patent
February 15, 2011
0Patent Application Number
120606330
Date Filed
April 1, 2008
0Patent Primary Examiner
Patent abstract
A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al1-x-yInxGayN; 0≦x<1, 0<y≦1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al1-x-yInxGayN/GaN; 0≦x<1, 0<y≦1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.
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