Patent attributes
A display device including both an n-channel thin film transistor and a p-channel thin film transistor each having excellent electric characteristics and high reliability is demonstrated, and a method for manufacturing thereof is also provided. The display device includes an inverted-staggered p-channel thin film transistor and an inverted-staggered n-channel thin film transistor in which a gate insulating film, a microcrystalline semiconductor film, and an amorphous semiconductor film are sequentially stacked over a gate electrode. The microcrystalline semiconductor film contains oxygen at a concentration of 1×1016 atoms/cm3 or less. Mobilities of the n-channel thin film transistor and the p-channel thin film transistor are from 10 to 45 cm2/V·s and 0.3 cm2/V·s or less, respectively.
