Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yi Ying Liao0
Chih Chieh Yeh0
Wen Jer Tsai0
Date of Patent
February 15, 2011
Patent Application Number
11923069
Date Filed
October 24, 2007
Patent Primary Examiner
Patent abstract
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
