US Patent 7888746 Semiconductor structure and method of manufacture
Patent 7888746 was granted and assigned to Hvvi Semiconductors Inc on February, 2011 by the United States Patent and Trademark Office.
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In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a semiconductor structure having a silicon-on-insulator (SOI) substrate and a dielectric region is disclosed. The dielectric region is adjacent to the active layer of the SOI substrate and the dielectric region includes a portion of a buried oxide (BOX) layer of the SOI substrate. At least a portion of the dielectric region extends from a surface of the active layer of the SOI substrate to a depth of at least about three microns or greater below the surface of the active layer. Other embodiments are described and claimed.
US Patent 07888746 Semiconductor structure and method of manufacture US Patent 7888746 Semiconductor structure and method of manufacture
US Patent 07888746 Semiconductor structure and method of manufacture
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