Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takaki Iwai0
Hisatada Yasukawa0
Masaki Taniguchi0
Date of Patent
February 15, 2011
0Patent Application Number
121734290
Date Filed
July 15, 2008
0Patent Primary Examiner
Patent abstract
An optical semiconductor device includes a phototransistor for receiving incident light. The phototransistor includes a collector layer of a first conductivity type formed on a semiconductor substrate, a base layer of a second conductivity type formed on the collector layer, and an emitter layer of a first conductivity type formed on the base layer. A thickness of the emitter layer is equal to or less than an absorption length of the incident light in the semiconductor substrate.
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